Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages-Reference-Cited by-同舟云学术

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Published:2022 Issue:38 Volume:14 Page:14029-14037
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Weijie¹²,Mu Jingwei¹²^ORCID,Liu Zhi-Hai¹³,Huang Shaoyun¹^ORCID,Pan Dong⁴^ORCID,Chen Yuanjie¹,Wang Ji-Yin¹³,Zhao Jianhua⁴,Xu H. Q.¹³^ORCID

Affiliation:

1. Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China

2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

3. Beijing Academy of Quantum Information Sciences, Beijing 100193, China

4. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Abstract

A coupled quantum dot (QD) containing a target QD and a charge sensor QD was realized. The detection visibility of the charge state transitions in the target QD was shown to be sensitively dependent on the tunnel barrier symmetry of the target QD.

Funder

Natural Science Foundation of Beijing Municipality

Beijing Academy of Quantum Information Sciences

Chinese Academy of Sciences

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR03459J

Reference45 articles.

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3. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots

4. Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array

5. Nagaoka ferromagnetism observed in a quantum dot plaquette