Biomemristors as the Next Generation Memory Devices

Abstract

Biomemristors based on resistive switching are promising candidates for the next generation of memory devices. Resistive switching devices utilize the hysteresis in the resistance of an active material to store information. Traditionally, rigid oxide-based materials and organic polymers are chosen as the active material for these devices. In this chapter, biomolecule-based, biodegradable, flexible, renewable, and biocompatible active materials are discussed. Their most common resistive switching mechanisms are explained. Some examples of memristors based on active biomacromolecules, namely, proteins, saccharides, nucleic acids, and their composites are described. Finally, technical challenges and opportunities for mitigation in the large-scale fabrication of such devices are discussed.