Profound influence of surface trap states on the utilization of charge carriers in CdS photoanodes-Reference-Cited by-同舟云学术

Profound influence of surface trap states on the utilization of charge carriers in CdS photoanodes

Published:2024 Issue: Volume: Page:
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Alagöz Elif Öykü¹²,Jahangiri Hadi³,Kaya Sarp¹²^ORCID

Affiliation:

1. Department of Chemistry, Koç University, 34450 Istanbul, Turkey

2. Koç University Tüpraş Energy Center (KUTEM), 34450 Istanbul, Turkey

3. Koç University Surface Science and Technology Center (KUYTAM), 34450 Istanbul, Turkey

Abstract

In CdS photoanodes, the decoration of surface sulfur vacancies by CTAB passivates the electron trapping process, resulting in improved photoelectrochemical water oxidation performance.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MA/D3MA00847A

Reference54 articles.

1. Recent advances in solution assisted synthesis of transition metal chalcogenides for photo-electrocatalytic hydrogen evolution

2. Increasing the active sites and intrinsic activity of transition metal chalcogenide electrocatalysts for enhanced water splitting

3. Transition Metal-Based Chalcogenides as Electrocatalysts for Overall Water Splitting

4. Recent Advances in Visible-Light-Driven Photoelectrochemical Water Splitting: Catalyst Nanostructures and Reaction Systems

5. CdS based heterojunction for water splitting: A review

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