A generic dual d-band model for interlayer ferromagnetic coupling in a transition-metal doped MnBi<sub>2</sub>Te<sub>4</sub> family of materials-Reference-Cited by-同舟云学术

A generic dual d-band model for interlayer ferromagnetic coupling in a transition-metal doped MnBi₂Te₄ family of materials

Published:2022 Issue:37 Volume:14 Page:13689-13695
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Huisheng¹^ORCID,Zhang Jingjing¹,Zhang Yaling¹,Yang Wenjia¹,Wang Yingying¹,Xu Xiaohong¹^ORCID,Liu Feng²

Affiliation:

1. College of Physics and Electronic Information & Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, 030031, China

2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Abstract

A generic dual d-band model is proposed to elucidate the energy difference between the AFM and FM coupling in TM-doped MnBi2Te4 family of materials. And high-temperature quantum anomalous Hall effect can be realized in V-doped Mn2Bi2Te5.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR03283J

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