The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Author:

Zhou Jian1,Ma Fengyang1,Chen Kai1,Zhao Wuyan1,Yang Riyi1,Qiao Chong2ORCID,Shen Hong1,Su Wan-Sheng345ORCID,Lu Ming1,Zheng Yuxiang16,Zhang Rongjun16ORCID,Chen Liangyao1,Wang Songyou167ORCID

Affiliation:

1. Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

2. School of Mathematics and Physics, Nanyang Institute of Technology, Nanyang 473004, China

3. National Taiwan Science Education Center, Taipei 111081, Taiwan

4. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106344, Taiwan

5. Department of Physics, National Sun Yat-sen University, Kaohsiung 804201, Taiwan

6. Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, 322000 Zhejiang, China

7. Key Laboratory for Information Science of Electromagnetic Waves (MoE), Shanghai 200433, China

Abstract

The luminescence of silicon quantum dots can be enhanced by the quantum size effect or by the effect of surface ligands.

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

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