Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers-Reference-Cited by-同舟云学术

Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers

Published:2019 Issue:71 Volume:9 Page:41569-41580
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hoi Bui D.¹²³⁴⁵,Phuong Le T. T.¹²³⁴⁵^ORCID,Lam Vo T.⁶⁷⁸⁵,Khoa Doan Q.⁹¹⁰¹¹⁸⁵,Tien Tran¹²³⁴⁵,Binh Nguyen T. T.¹²¹³¹⁴⁵,Phuc Huynh V.¹⁵¹⁶¹⁷⁵,Hieu Nguyen N.¹²¹³¹⁴⁵^ORCID,Nguyen Chuong V.¹⁸¹⁹²⁰⁵

Affiliation:

1. Department of Physics

2. University of Education

3. Hue University

4. Hue City

5. Vietnam

6. Faculty of Natural Sciences Pedagogy

7. Sai Gon University

8. Ho Chi Minh City

9. Division of Computational Physics

10. Institute for Computational Science

11. Ton Duc Thang University

12. Institute of Research and Development

13. Duy Tan University

14. Danang

15. Division of Theoretical Physics

16. Dong Thap University

17. Cao Lanh

18. Department of Materials Science and Engineering

19. Le Quy Don Technical University

20. Hanoi

Abstract

The potential of manipulating the electronic heat capacity and Pauli susceptibility of hydrogenated AA-stacked graphene, silicon carbide, and hexagonal boron nitride bilayers is studied.

Funder

National Foundation for Science and Technology Development

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA08446K

Reference60 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. The electronic properties of graphene