Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays

Author:

Zeng Xiao-Dong12,Yang Yuan-Ze12,Guo Nai-Jie12,Li Zhi-Peng12,Wang Zhao-An12,Xie Lin-Ke12,Yu Shang12,Meng Yu12,Li Qiang34ORCID,Xu Jin-Shi125ORCID,Liu Wei12,Wang Yi-Tao12,Tang Jian-Shun125,Li Chuan-Feng125ORCID,Guo Guang-Can125

Affiliation:

1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China

2. CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China

3. Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China

4. State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

5. Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China

Abstract

Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing.

Funder

Fok Ying Tong Education Foundation

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Magnetic field imaging by hBN quantum sensor nanoarray;Applied Physics Letters;2023-06-12

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