Through-silicon via submount for the CuO/Cu2O nanostructured field emission display-Reference-Cited by-同舟云学术

Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

Published:2018 Issue:2 Volume:8 Page:706-709
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lu Chun-Liang¹²³⁴,Chang Shoou-Jinn¹²³⁴,Hsueh Ting-Jen⁵⁶⁴^ORCID

Affiliation:

1. Institute of Microelectronics and Department of Electrical Engineering

2. National Cheng Kung University

3. Tainan 701

4. Taiwan

5. National Nano Devices Laboratories

6. Tainan 741

Abstract

A three dimensional (3D) field emission display structure was prepared using CuO/Cu₂O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA12368J

Reference20 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

3. CuO-Nanowire Field Emitter Prepared on Glass Substrate

4. CuO Nanowires Can Be Synthesized by Heating Copper Substrates in Air

5. Environmentally-friendly, Pb-free Cu front electrode for Si-based solar cell applications

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