Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface-Reference-Cited by-同舟云学术

Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Published:2015 Issue:40 Volume:17 Page:26530-26534
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Nawaz Ali¹²³⁴,Cruz-Cruz Isidro¹²³⁴,Rodrigues Rafael¹²³⁴,Hümmelgen Ivo A.¹²³⁴

Affiliation:

1. Departamento de Física

2. Universidade Federal do Paraná

3. 81531–990- Curitiba

4. Brazil

Abstract

Surfactant treatment of the poly(vinyl alcohol) gate insulator enhances the field-effect mobility of poly(3-hexylthiophene-2,5-diyl) transistors.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP02245A

Reference20 articles.

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3. Double-gate organic thin-film transistor using a photosensitive polymer as the dielectric layer

4. Low-Voltage Poly(3-Hexylthiophene)/Poly(Vinyl Alcohol) Field-Effect Transistor and Inverter

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