Structures and electronic properties of B2Si6−/0/+: anion photoelectron spectroscopy and theoretical calculations-Reference-Cited by-同舟云学术

Structures and electronic properties of B2Si6−/0/+: anion photoelectron spectroscopy and theoretical calculations

Published:2016 Issue:67 Volume:6 Page:62165-62171
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cao Guo-Jin¹²³⁴,Lu Sheng-Jie⁵⁶⁷⁸⁹,Xu Hong-Guang⁵⁶⁷⁸⁹,Xu Xi-Ling⁵⁶⁷⁸⁹,Zheng Wei-Jun⁵⁶⁷⁸⁹

Affiliation:

1. Institute of Molecular Science

2. Shanxi University

3. Taiyuan 030006

4. China

5. Beijing National Laboratory for Molecular Sciences

6. State Key Laboratory of Molecular Reaction Dynamics

7. Institute of Chemistry

8. Chinese Academy of Sciences

9. Beijing 100190

Abstract

The lowest-energy structures of B₂Si₆^q(q= −1, 0, +1) clusters are a peculiar structure with a silicon atom hanging over a distorted bowl-like B₂Si₅framework. It is characterized with σ or π delocalization in chemical bonding.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA08251C

Reference66 articles.

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5. Hydrogenated Silicon Fullerenes: Effects of H on the Stability of Metal-Encapsulated Silicon Clusters

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