Robust electronic properties of monolayer BeO against molecule adsorption-Reference-Cited by-同舟云学术

Robust electronic properties of monolayer BeO against molecule adsorption

Published:2023 Issue:12 Volume:25 Page:8853-8860
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Hongsheng¹²^ORCID,Ksenevich Vitaly²³,Zhao Jijun¹⁴,Gao Junfeng¹⁴²^ORCID

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China

2. Dalian University of Technology and Belarusian State University Joint Institute & Innovation Center, Dalian 116024, China

3. Faculty of Physics, Belarusian State University, Nezalezhnastsi av.4, Minsk 220030, Belarus

4. State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment (Dalian University of Technology), Dalian 116024, China

Abstract

BeO monolayers with and without Be vacancies show high structural and electronic stability upon exposure to air. O vacancies are not favorable and can be easily healed by H2O or CO2 adsorption.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

High-end Foreign Experts Recruitment Plan of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05980K

Reference37 articles.

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3. Transistors based on two-dimensional materials for future integrated circuits

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