A 2D material-based floating gate device with linear synaptic weight update-Reference-Cited by-同舟云学术

A 2D material-based floating gate device with linear synaptic weight update

Published:2020 Issue:48 Volume:12 Page:24503-24509
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Eunpyo¹²³⁴⁵,Kim Minkyung¹²³⁴⁶,Kim Tae Soo⁶⁷⁸⁴,Kim In Soo⁹²³⁴,Park Jongkil¹²³⁴,Kim Jaewook¹²³⁴,Jeong YeonJoo¹²³⁴^ORCID,Lee Suyoun¹²³⁴^ORCID,Kim Inho¹²³⁴,Park Jong-Keuk¹²³⁴,Kim Gyu Tae⁵¹⁰³⁴^ORCID,Chang Jiwon¹¹¹²¹³⁴^ORCID,Kang Kibum⁶⁷⁸⁴^ORCID,Kwak Joon Young¹²³⁴^ORCID

Affiliation:

1. Center for Neuromorphic Engineering

2. Korea Institute of Science and Technology (KIST)

3. Seoul

4. South Korea

5. School of Electrical Engineering

6. Department of Materials Science and Engineering

7. Korea Advanced Institute of Science and Technology (KAIST)

8. Daejeon 34141

9. Nanophotonics Research Center

10. Korea University

11. Department of Electrical and Computer Engineering

12. Ulsan National Institute of Science and Technology (UNIST)

13. Ulsan 44919

Abstract

A three-terminal top-gated flash device based on two-dimensional materials with a high coupling ratio exhibits highly linear synaptic weight updates.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR07403A

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