Affiliation:
1. New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210046, China
Abstract
2D MoGe2P4 is predicted to be a direct bandgap semiconductor which has large valley spin splitting. Biaxial strain can regulate the transition of 2D MoGe2P4 from a semiconductor to a metal. 2D MoGe2P4 has excellent absorption in ultraviolet and visible light regions.
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
Natural Science Research of Jiangsu Higher Education Institutions of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Cited by
2 articles.
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