Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP–Si–SiGe nanowires by controlled faceting
Author:
Affiliation:
1. L-NESS and Department of Materials Science
2. University of Milano Bicocca
3. 20125 Milano
4. Italy
5. Department of Applied Physics
6. Eindhoven University of Technology
7. 5612AP Eindhoven
8. The Netherlands
Abstract
Segregation of Ge-rich nanoprisms in hexagonal GaP–Si–SiGe core–shell nanowires explained by STEM-EDX analysis and phase-field simulations.
Funder
Provincie Noord-Brabant
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08051A
Reference49 articles.
1. Nanowire Electronics: From Nanoscale to Macroscale
2. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions
3. Self-assembled quantum dots in a nanowire system for quantum photonics
4. Emergence of Localized States in Narrow GaAs/AlGaAs Nanowire Quantum Well Tubes
5. Nanowires for energy: A review
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct bandgap quantum wells in hexagonal Silicon Germanium;Nature Communications;2024-06-19
2. Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires;Applied Surface Science;2024-01
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