Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP–Si–SiGe nanowires by controlled faceting
Author:
Affiliation:
1. L-NESS and Department of Materials Science
2. University of Milano Bicocca
3. 20125 Milano
4. Italy
5. Department of Applied Physics
6. Eindhoven University of Technology
7. 5612AP Eindhoven
8. The Netherlands
Abstract
Segregation of Ge-rich nanoprisms in hexagonal GaP–Si–SiGe core–shell nanowires explained by STEM-EDX analysis and phase-field simulations.
Funder
Provincie Noord-Brabant
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08051A
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1. Nanowire Electronics: From Nanoscale to Macroscale
2. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions
3. Self-assembled quantum dots in a nanowire system for quantum photonics
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