The mechanism of semiconductor to metal transition in the hydrogenation of VO<sub>2</sub>: a density functional theory study-Reference-Cited by-同舟云学术

The mechanism of semiconductor to metal transition in the hydrogenation of VO₂: a density functional theory study

Published:2022 Issue:9 Volume:24 Page:5710-5719
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Dai Jian¹²,Shi Yong¹,Chen Cuiting¹,Chen Xing¹,Zhao Cuihua¹³^ORCID,Chen Jianhua¹³^ORCID

Affiliation:

1. School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

2. ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311215, China

3. Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, Guangxi University, Nanning 530004, China

Abstract

The hydrogenation of VO2 surface can decrease its energy gap, and it would finally transfer from semiconductor to conductor with increasing the hydrogen content.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP03891E

Reference66 articles.

1. The metal-insulator transition in VO2

2. Hall Effect in VO2near the Semiconductor-to-Metal Transition

3. Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator

4. Identifying the Collective Length in VO 2 Metal–Insulator Transitions

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