Using phase boundary mapping to resolve discrepancies in the Mg2Si–Mg2Sn miscibility gap-Reference-Cited by-同舟云学术

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Using phase boundary mapping to resolve discrepancies in the Mg2Si–Mg2Sn miscibility gap

Published:2021 Issue:11 Volume:9 Page:7208-7215
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Orenstein Rachel¹²³⁴^ORCID,Male James P.¹²³⁴^ORCID,Toriyama Michael¹²³⁴,Anand Shashwat¹²³⁴^ORCID,Snyder G. Jeffrey¹²³⁴^ORCID

Affiliation:

1. Materials Science and Engineering

2. Northwestern University

3. Evanston

4. USA

Abstract

A new understanding of the MgSi–MgSn miscibility gap is reached through phase boundary mapping the Mg–Si–Sn ternary phase diagram.

Funder

National Institute of Standards and Technology

Northwestern University

U.S. Department of Energy

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D1TA00115A

Reference34 articles.

1. Complex thermoelectric materials

2. Thermoelectric Cooling and Power Generation

3. The panoscopic approach to high performance thermoelectrics

4. Nanostructured Thermoelectrics: The New Paradigm?

5. Alloy scattering of phonons

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1. Device level assessment of Ni and Ni45Cu55 as electrodes in Mg2(Si,Sn)-based thermoelectric generators;Materials & Design;2024-03

2. Device Level Assessment of Ni and Ni45cu55 as Electrodes in Mg2(Si,Sn)-Based Thermoelectric Generators;2023

3. Phase-Boundary Mapping to Engineer Defects in Thermoelectric Materials;PRX Energy;2022-09-15

4. Developing a two-parabolic band model for thermoelectric transport modelling using Mg₂Sn as an example;Journal of Physics: Energy;2022-08-04

5. Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg ₂ Si;ChemNanoMat;2022-07-08

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