Syntheses, structures, and optical properties of Ba4Ga4SnSe12 and Ba6Ga2SnSe11-Reference-Cited by-同舟云学术

Syntheses, structures, and optical properties of Ba4Ga4SnSe12 and Ba6Ga2SnSe11

Published:2015 Issue:5 Volume:44 Page:2259-2266
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Yin Wenlong¹²³⁴,Lin Zuohong⁵⁶⁷⁸⁴,Kang Lei⁵⁶⁷⁸⁴,Kang Bin¹²³⁴,Deng Jianguo¹²³⁴,Lin Zheshuai⁵⁶⁷⁸⁴,Yao Jiyong⁵⁶⁷⁸⁴,Wu Yicheng⁵⁶⁷⁸⁴

Affiliation:

1. Institute of Chemical Materials

2. China Academy of Engineering Physics

3. Mianyang

4. China

5. Key Laboratory of Functional Crystals and Laser Technology

6. Technical Institute of Physics and Chemistry

7. Chinese Academy of Sciences

8. Beijing 100190

Abstract

Two new quaternary selenides Ba₄Ga₄SnSe₁₂ and Ba₆Ga₂SnSe₁₁, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system, have been synthesized.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/DT/C4DT02244K

Reference55 articles.

1. CsHgInS3: a New Quaternary Semiconductor for γ-ray Detection

2. CsBi 4 Te 6 : A High-Performance Thermoelectric Material for Low-Temperature Applications

3. The CsLnMSe3 Semiconductors (Ln = Rare-Earth Element, Y; M = Zn, Cd, Hg)

4. Tuning of Optical Band Gaps: Syntheses, Structures, Magnetic Properties, and Optical Properties of CsLnZnSe3 (Ln = Sm, Tb, Dy, Ho, Er, Tm, Yb, and Y)

5. Syntheses, Structure, Some Band Gaps, and Electronic Structures of CsLnZnTe3 (Ln = La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y)

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