Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties-Reference-Cited by-同舟云学术

Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Published:2014 Issue:6 Volume:50 Page:682-684
ISSN:1359-7345
Container-title:Chem. Commun.
language:en
Short-container-title:Chem. Commun.

Author:

Wang Xingfu,Tong Jinhui,Chen Xin,Zhao Bijun,Ren Zhiwei,Li Danwei,Zhuo Xiangjing,Zhang Jun,Yi Hanxiang,Liu Chao,Fang Fang,Li Shuti

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CC/C3CC47239F

Reference16 articles.

1. Self-powered nanowire devices

2. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

3. Direct-Current Nanogenerator Driven by Ultrasonic Waves

4. 1D CdS/PbS heterostructured nanowire synthesis using cation exchange

5. From Si Source Gas Directly to Positioned, Electrically Contacted Si Nanowires: The Self-Assembling “Grow-in-Place” Approach

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