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Tailoring perpendicular magnetic anisotropy with graphene oxide membranes

Published:2017 Issue:83 Volume:7 Page:52938-52944
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ning Keyu¹²³⁴⁵,Liu Houfang¹²³⁴⁵,Li Linsen¹²³⁴⁵,Li Huanglong⁶²³⁴,Feng Jiafeng⁷⁸⁹¹⁰¹¹,Yang Baishun⁷⁸⁹¹⁰¹¹,Liu Xiao¹²³⁴⁵,Li Yuxing¹²³⁴⁵,Chen Yanhui¹²¹³¹⁴⁴,Wei Hongxiang⁷⁸⁹¹⁰¹¹,Han Xiufeng⁷⁸⁹¹⁰¹¹,Mao Shengcheng¹²¹³¹⁴⁴,Zhang Xixiang¹⁵¹⁶¹⁷¹⁸^ORCID,Yang Yi¹²³⁴⁵,Ren Tian-ling¹²³⁴⁵^ORCID

Affiliation:

1. Institute of Microelectronics

2. Tsinghua University

3. Beijing 100084

4. China

5. Tsinghua National Laboratory for Information Science and Technology

6. Department of Precision Instrument

7. Beijing National Laboratory of Condensed Matter Physics

8. Institute of Physics

9. University of Chinese Academy of Science

10. Chinese Academy of Sciences

11. Beijing 100190

12. Institute of Microstructure and Property of Advanced Materials

13. Beijing University of Technology

14. Beijing

15. Physical Science and Engineering

16. King Abdullah University of Science and Technology (KAUST)

17. Thuwal 239955

18. Kingdom of Saudi Arabia

Abstract

We report the enhancement of the perpendicular magnetic anisotropy of CoFeB film by coating of GO membranes and even reaches 0.6 mJ m⁻².

Funder

National Natural Science Foundation of China

King Abdullah University of Science and Technology

Youth Innovation Promotion Association of Chinese Academy of Sciences

Beijing Natural Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA08644J

Reference37 articles.

1. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

2. Graphene spintronics

3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

4. Single-layer MoS2 transistors

5. Black phosphorus field-effect transistors

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