Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface-Reference-Cited by-同舟云学术

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface

Published:2017 Issue:42 Volume:19 Page:28676-28683
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lee M.¹²³⁴⁵,Arras R.¹²³⁴,Warot-Fonrose B.¹²³⁴,Hungria T.⁶⁷⁸⁴,Lippmaa M.⁹¹⁰¹¹¹²,Daimon H.⁵¹³¹²,Casanove M. J.¹²³⁴^ORCID

Affiliation:

1. Centre d’Elaboration des Matériaux et d’Etudes Structurales (CEMES)

2. CNRS UPR 8011 and Université de Toulouse

3. F-31055 Toulouse

4. France

5. Nara Institute of Science and Technology (NAIST)

6. Centre de MicroCaractérisation Raimond Castaing

7. Université de Toulouse

8. F-31400 Toulouse

9. Institute for Solid State Physics

10. University of Tokyo

11. 277-8581 Chiba

12. Japan

13. Ikoma 630-0192

Abstract

Different levels of Ir doping at the LaAlO₃/SrTiO₃ interface affect the strain state in LaAlO₃, as investigated using atomically resolved microscopy (HAADF-STEM), electron energy loss spectroscopy (EELS) and first-principles calculations (DFT).

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP05918C

Reference43 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Why some interfaces cannot be sharp

3. Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

4. Electronic reconstruction atn-typeSrTiO3/LaAlO3interfaces

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