Structural optimization and engineering of InxGa1−xN quantum dot intermediate band solar cells with intrinsic GaN interlayers-Reference-Cited by-同舟云学术

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Structural optimization and engineering of In_xGa_1−xN quantum dot intermediate band solar cells with intrinsic GaN interlayers

Published:2024 Issue:7 Volume:3 Page:1632-1641
ISSN:2753-1457
Container-title:Energy Advances
language:en
Short-container-title:Energy Adv.

Author:

Eric Deborah¹²^ORCID,Jiang Jianliang²,Imran Ali³,Khan Abbas Ahmad⁴

Affiliation:

1. Department of Electronics Engineering, Dong-A University, Busan 49315, South Korea

2. School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

3. School of Micro and Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, State Key Labs of Silicon Materials and Micro-Nano Fabrication Center, Zhejiang University, Hangzhou 311200, China

4. IMDEA-Nanociencia, Campus de Cantoblanco, 28049 Madrid, Spain

Abstract

We proposed an optical structure to enhance photoelectric efficiency by optimizing 1 nm i-GaN layers to compensate for lattice mismatch from the In0.5Ga0.5N/GaN layer and absorb excess strain, boosting efficiency.

Funder

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/YA/D4YA00103F

Reference57 articles.

1. Solar cell efficiency tables (Version 58)

2. Snapshot of photovoltaics – February 2022

3. PV cells and modules – State of the art, limits and trends

4. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

5. Understanding intermediate-band solar cells

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