All-polymer field-effect transistors using a brush gate dielectric-Reference-Cited by-同舟云学术

All-polymer field-effect transistors using a brush gate dielectric

Published:2013 Issue:46 Volume:1 Page:7736
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Rodríguez Ana B.,Tomlinson Michael R.,Khodabakhsh Saghar,Chang Jui-Fen,Cousin Fabrice,Lott Dieter,Sirringhaus Henning,Huck Wilhelm T. S.,Higgins Anthony M.,Geoghegan Mark

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC31076K

Reference27 articles.

1. Materials and Fabrication Needs for Low-Cost Organic Transistor Circuits

2. Organic thin-film transistors

3. Effects of gate dielectrics and their solvents on characteristics of solution-processed N-channel polymer field-effect transistors

4. Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors

5. Downscaling of self-aligned, all-printed polymer thin-film transistors

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5. Surface-Initiated Controlled Radical Polymerization: State-of-the-Art, Opportunities, and Challenges in Surface and Interface Engineering with Polymer Brushes;Chemical Reviews;2017-01-30