Heteroepitaxy of perovskite (111) SrTiO3 on wurtzite (0002) GaN using an artificial interface lattice design
Author:
Affiliation:
1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure
2. Shanghai Institute of Ceramics
3. Chinese Academy of Science
4. Shanghai
5. PR China
6. Nanjing NanoArc New Materials Technology Co., Ltd.
7. Nanjing
Abstract
Epitaxial integration of perovskite SrTiO3 on wurtzite GaN was realized using novel designed hexagonal Ti and spinel MgAl2O4 buffer layers.
Funder
National Natural Science Foundation of China
National Basic Research Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE01418G
Reference28 articles.
1. A Ferroelectric Oxide Made Directly on Silicon
2. Oxygen vacancy induced photoluminescence and ferromagnetism in SrTiO3 thin films by molecular beam epitaxy
3. Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V−1 s−1
4. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
5. Crystalline Oxides on Silicon: The First Five Monolayers
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