Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers
Author:
Affiliation:
1. Department of Chemistry
2. Kyung Hee University
3. Seoul 130-701
4. Korea
5. Department of Materials Science and Engineering
6. Korea University
7. Seoul 136-701
8. Kookmin University
9. Seoul 136-702
Abstract
Dual wavelength lasing is achieved in InGaN/GaN axial-heterostructure nanorods by optical confinement effects.
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR03906F
Reference50 articles.
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3. Polarized light emission from photonic crystal light-emitting diodes
4. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
5. GaN nanowire lasers with low lasing thresholds
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