A new family of NaTMGe (TM = 3d transition metals) half-Heusler compounds: the role of TM modification

Author:

Vu Tuan V.12ORCID,Nguyen Duy Khanh3,Guerrero-Sanchez J.4,Rivas-Silva J. F.5,Cocoletzi Gregorio H.5,Hoat D. M.67ORCID

Affiliation:

1. Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam

2. Faculty of Mechanical - Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam

3. High-Performance Computing Lab (HPC Lab), Information Technology Center, Thu Dau Mot University, Binh Duong Province, Vietnam

4. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

5. Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570, Mexico

6. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

7. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

Abstract

Band structures of NaTMGe half-Heusler compounds.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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