Microwave plasma-assisted chemical vapor deposition of microcrystalline diamond films via graphite etching under different hydrogen flow rates-Reference-Cited by-同舟云学术

Microwave plasma-assisted chemical vapor deposition of microcrystalline diamond films via graphite etching under different hydrogen flow rates

Published:2019 Issue:15 Volume:21 Page:2502-2507
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yao Kaili¹²³⁴,Dai Bing¹²³⁴,Tan Xiaojun¹²³⁴,Yang Lei¹²³⁴,Zhao Jiwen¹²³⁴,Ralchenko Victor¹²³⁴⁵,Shu Guoyang¹²³⁴,Liu Kang¹²³⁴,Han Jiecai¹²³⁴,Zhu Jiaqi¹²³⁴⁶^ORCID

Affiliation:

1. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments

2. Harbin Institute of Technology

3. Harbin 150080

4. P. R. China

5. Prokhorov General Physics Institute of Russian Academy of Sciences

6. Key Laboratory of Micro-systems and Micro-structures Manufacturing

Abstract

The growth of microcrystalline diamond films with different hydrogen flow rates via etching graphite as the carbon source was studied.

Funder

National Natural Science Foundation of China

Harbin Institute of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00120D

Reference38 articles.

1. Fabrication of arrays of high-aspect-ratio diamond nanoneedles via maskless ECR-assisted microwave plasma etching

2. Fabrication of silicon-vacancy color centers in diamond films: tetramethylsilane as a new dopant source

3. Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters

4. Effect of Diamond Additions on Wettability and Distribution of SnAgCu Composite Solder

5. Thermal conductivity of free-standing CVD diamond films by growing on both nuclear and growth sides

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