Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals-Reference-Cited by-同舟云学术

Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals

Published:2022 Issue:28 Volume:14 Page:10067-10074
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Serrano-Sanchez Federico¹^ORCID,Yao Mengyu¹,He Bin¹,Chen Dong¹,Gloskovskii Andrei²,Fedorov Alexander³⁴,Auffermann Gudrun¹,Liu Enke⁵,Burkhardt Ulrich¹,Fecher Gerhard H.¹,Fu Chenguang¹⁶^ORCID,Felser Claudia¹,Pan Yu¹^ORCID

Affiliation:

1. Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany

2. Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany

3. Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany

4. Institute for Solid State Research, Leibniz IFW Dresden, 01069 Dresden, Germany

5. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China

6. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China

Abstract

The electronic structure of half-Heusler TiCoSb single crystals reveals a band-convergence scenario in which slight changes at the Fermi level lead to significant differences in the Seebeck effective mass and electronic properties.

Funder

Bundesministerium für Bildung und Forschung

Alexander von Humboldt-Stiftung

H2020 Marie Skłodowska-Curie Actions

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02556F