Control of highly anisotropic electrical conductance of tellurene by strain-engineering
Author:
Affiliation:
1. Hefei National Laboratory for Physical Sciences at Microscale
2. Department of Chemical Physics
3. and Synergetic Innovation Center of Quantum Information and Quantum Physics
4. University of Science and Technology of China
5. Hefei
Abstract
The highly anisotropic electron mobility and electrical conductance of β-Te can be controlled by strain-engineering and the direction of electrical conductance of β-Te can be changed from the armchair to the zigzag direction at a strain between −1% and 0%.
Funder
National Natural Science Foundation of China
National Basic Research Program of China
Chinese Academy of Sciences
University of Science and Technology of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05660B
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