In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies
2. School of Materials
3. Sun Yat-sen University
4. Guangzhou
5. China
Abstract
In-plane enhanced epitaxy provides reference for the preparation of high-quality AlN and development of VUV photodetectors..
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01852B
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5. Vacuum-Ultraviolet Photodetection in Few-Layered h-BN
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