Pressure-induced bandgap engineering of lead-free halide double perovskite (NH4)2SnBr6-Reference-Cited by-同舟云学术

Pressure-induced bandgap engineering of lead-free halide double perovskite (NH4)2SnBr6

Published:2021 Issue:35 Volume:23 Page:19308-19312
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wang Jiaxiang¹,Wang Lingrui¹^ORCID,Wang Fei¹²^ORCID,Jiang Sheng³,Guo Haizhong¹⁴^ORCID

Affiliation:

1. Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

2. International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

3. Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

4. Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan, Shandong 250358, China

Abstract

Pressure-induced bandgap engineering of (NH4)2SnBr6 elucidates the structure–property relationship and provides guidance for the application of HDPs in practical devices.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03267D

Reference38 articles.

1. Improved photoluminescence quantum yield of CsPbBr 3 quantum dots glass ceramics