Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays-Reference-Cited by-同舟云学术

Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays

Published:2020 Issue:11 Volume:5 Page:1530-1537
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Yuan Xiaoming¹²³⁴⁵^ORCID,Wang Naiyin⁶⁷⁸⁹¹⁰,Tian Zhenzhen¹²³⁴⁵,Zhang Fanlu⁶⁷⁸⁹¹⁰,Li Li¹¹¹²⁸⁹¹⁰,Lockrey Mark¹³¹⁴¹⁵¹⁰^ORCID,He Jun¹²³⁴⁵,Jagadish Chennupati⁶⁷⁸⁹¹⁰,Tan Hark Hoe⁶⁷⁸⁹¹⁰^ORCID

Affiliation:

1. Hunan Key Laboratory of Super Microstructure and Ultrafast Process

2. School of Physics and Electronics

3. Central South University

4. Changsha

5. P. R. China

6. Department of Electronic Materials Engineering

7. Research School of Physics

8. The Australian National University

9. Canberra

10. Australia

11. Australian National Fabrication Facility ACT Node

12. Research School of Physics and Engineering

13. Microstructural Analysis Unit

14. University of Technology Sydney

15. Sydney

Abstract

Selective area epitaxy is a powerful growth technique to produce III–V semiconductor nanoshape arrays and heterostructures for photonic and electronic applications.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

State Key Laboratory of Luminescence and Applications

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NH/D0NH00410C

Reference50 articles.