Polymorphic Ga<sub>2</sub>S<sub>3</sub> nanowires: phase-controlled growth and crystal structure calculations-Reference-Cited by-同舟云学术

Polymorphic Ga₂S₃ nanowires: phase-controlled growth and crystal structure calculations

Published:2022 Issue:15 Volume:4 Page:3218-3225
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Park Kidong¹,Kim Doyeon¹^ORCID,Debela Tekalign Terfa²^ORCID,Boujnah Mourad²,Zewdie Getasew Mulualem²,Seo Jaemin¹^ORCID,Kwon Ik Seon¹^ORCID,Kwak In Hye¹^ORCID,Jung Minkyung³^ORCID,Park Jeunghee¹^ORCID,Kang Hong Seok⁴^ORCID

Affiliation:

1. Department of Advanced Materials Chemistry, Korea University, Sejong 339-700, Republic of Korea

2. Institute for Application of Advanced Materials, Jeonju University, Chonbuk 55069, Republic of Korea

3. DGIST Research Institute, DGIST, Daegu 42988, Republic of Korea

4. Department of Nano and Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea

Abstract

Polymorphic Ga2S3 nanowires grown via chemical vapor deposition exhibit distinctive evolution of various crystal structures.

Funder

Ministry of Science ICT and Future Planning

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00265E

Reference40 articles.

1. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

2. Nanowire Assemblies for Flexible Electronic Devices: Recent Advances and Perspectives

3. Optical absorption in α-Ga2S3 single crystals

4. Zur Struktur des Ga2S3

5. The crystal structure of α-Ga2S3

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