Monolayer Bi2Se3−xTex: novel two-dimensional semiconductors with excellent stability and high electron mobility-Reference-Cited by-同舟云学术

Monolayer Bi2Se3−xTex: novel two-dimensional semiconductors with excellent stability and high electron mobility

Published:2020 Issue:17 Volume:22 Page:9685-9692
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Yifan¹²³⁴^ORCID,Xu Yuanfeng¹²³⁴^ORCID,Ji Yanju¹²³⁴,Zhang Hao⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Science

2. Shandong Jianzhu University

3. Jinan 250101

4. China

5. Key Laboratory for Information Science of Electromagnetic Waves (MoE)

6. Key Laboratory of Micro and Nano Photonic Structures (MoE) and Department of Optical Science and Engineering

7. Fudan University

8. Shanghai 200433

Abstract

The bandgaps for monolayers Bi₂Se₃, Bi₂Se₂Te and Bi₂SeTe₂ decrease under moderate strains ranging from −4% to 10%, and the predicted electron mobilities are high, reaching 2708 cm² V⁻¹ s⁻¹ for Bi₂SeTe₂.

Funder

National Natural Science Foundation of China

Shandong Jianzhu University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP00729C

Reference45 articles.

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4. Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

5. Intriguing electronic and optical properties of two-dimensional Janus transition metal dichalcogenides

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