A case of perfect convergence of light and heavy hole valence bands in SnTe: the role of Ge and Zn co-dopants-Reference-Cited by-同舟云学术

A case of perfect convergence of light and heavy hole valence bands in SnTe: the role of Ge and Zn co-dopants

Published:2022 Issue:14 Volume:3 Page:5941-5946
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Shenoy U. Sandhya¹^ORCID,D. Goutham K.²,Bhat D. Krishna³^ORCID

Affiliation:

1. Department of Chemistry, Institute of Engineering and Technology, Srinivas University, Mukka, Mangalore 574146, India

2. Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India

3. Department of Chemistry, National Institute of Technology Karnataka, Surathkal, Mangalore 575025, India

Abstract

Remarkable engineering of the electronic structure of SnTe by co-doping Ge and Zn. The synergistic effect of the resonance level, increase in the band gap and perfect convergence of valence sub-bands with reduced thermal conductivity leads to enhanced TE performance.

Funder

Council of Scientific and Industrial Research

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00315E

Reference51 articles.

1. Rationally Designing High-Performance Bulk Thermoelectric Materials

2. Advanced Thermoelectric Design: From Materials and Structures to Devices