Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks-Reference-Cited by-同舟云学术

Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

Published:2022 Issue:25 Volume:12 Page:16291-16295
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sun Yun¹²,Li Pengpeng¹²,Kauppinen Esko I.³,Sun Dong-Ming¹²^ORCID,Ohno Yutaka⁴

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China

2. School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China

3. Department of Applied Physics, Aalto University School of Science, PO Box 15100, FI-00076 Aalto Espoo, Finland

4. Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Abstract

A full comprehension about the key factors to achieve ultrahigh on/off ratio thin-film transistors using as-grown CNT networks has been provided, including residual surfactants, chemical doping and CNT diameter.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Chinese Academy of Sciences

National Institute of Information and Communications Technology

Academy of Finland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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