Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs3Cu2I5/PdTe2/Ge multiheterostructures-Reference-Cited by-同舟云学术

Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs3Cu2I5/PdTe2/Ge multiheterostructures

Published:2021 Issue:41 Volume:9 Page:14897-14907
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liang Yi¹,Xie Chao²^ORCID,Dong Cheng-yun¹,Tong Xiao-wei¹,Yang Wen-hua²,Wu Chun-yan¹^ORCID,Luo Lin-bao¹^ORCID

Affiliation:

1. School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China

2. School of Electronics and Information Engineering, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei, Anhui 230601, P. R. China

Abstract

A photodetector composed of a Cs3Cu2I5/PdTe2/Ge multiheterostructure presents an excellent electrically adjusted DUV/NIR single band/dual-band photodetecting ability and has the potential for applications in dual-band optical image sensing.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC04290D

Reference57 articles.

1. Dual-band infrared imaging using stacked colloidal quantum dot photodiodes