Why does the presence of silicon atoms improve the emission properties of biphenyl derivatives? – Verification of various hypotheses by experiment and theory
Author:
Affiliation:
1. Faculty of Chemistry
2. Adam Mickiewicz University
3. 61-614 Poznan
4. Poland
5. Center for Advanced Technology
6. Radiation Laboratory
7. University of Notre Dame
8. Notre Dame
9. USA
Abstract
Enhanced emission of 4,4′-bis(vinyldimethylsilyl)-biphenyl as compared to its carbon analogue resulted from the presence of the silicon atom that caused stronger transition moment of the emissive state and more efficient mixing of the excited states.
Funder
Narodowe Centrum Nauki
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03749G
Reference35 articles.
1. Further Evidence of a Hidden Singlet Transition in Biphenyl
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3. Elucidation of the Forces Governing the Stereochemistry of Biphenyl
4. Electronic structure and torsional potentials in ground and excited states of biphenyl, fulvalene, and related compounds
5. The influence of molecular conformation on electronic relaxation processes. The excitation-wavelength dependence of the radiative and nonradiative rates of biphenyl
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