Investigation of silicon-vacancy center formation during the CVD diamond growth of thin and delta doped layers-Reference-Cited by-同舟云学术

Investigation of silicon-vacancy center formation during the CVD diamond growth of thin and delta doped layers

Published:2021 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lobaev Mikhail A.¹²³⁴⁵^ORCID,Gorbachev Alexey M.¹²³,Radishev Dmitry B.¹²³⁴⁵,Vikharev Anatoly L.¹²³⁴⁵,Bogdanov Sergey A.¹²³⁴⁵,Isaev Vladimir A.¹²³⁴⁵,Drozdov Mikhail N.¹²³

Affiliation:

1. Federal Research Center “Institute of Applied Physics RAS”

2. Nizhny Novgorod

3. Russia

4. Federal Research Center “Kazan Scientific Center of RAS”

5. Kazan

Abstract

A study of the process of diamond doping with silicon during CVD growth is presented. As a result, for the first time, a silicon-doped delta layer with a thickness of 5 nm and a depth localization accuracy of several nanometers was demonstrated.

Funder

Kazan Federal University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01538A

Reference24 articles.

1. Semiconductors and semimetals, v. 103, Diamond for quantum applications , ed. C. E. Nebel , I. Aharonovich , N. Mizuochi , M. Hatano , 2020

2. Electronic structure of the negatively charged silicon-vacancy center in diamond

3. Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium