Investigation of silicon-vacancy center formation during the CVD diamond growth of thin and delta doped layers
Author:
Affiliation:
1. Federal Research Center “Institute of Applied Physics RAS”
2. Nizhny Novgorod
3. Russia
4. Federal Research Center “Kazan Scientific Center of RAS”
5. Kazan
Abstract
A study of the process of diamond doping with silicon during CVD growth is presented. As a result, for the first time, a silicon-doped delta layer with a thickness of 5 nm and a depth localization accuracy of several nanometers was demonstrated.
Funder
Kazan Federal University
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01538A
Reference24 articles.
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2. Electronic structure of the negatively charged silicon-vacancy center in diamond
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5. Single photon emission from SiV centres in diamond produced by ion implantation
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