High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering-Reference-Cited by-同舟云学术

High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Published:2019 Issue:38 Volume:7 Page:11834-11844
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Shun¹²³⁴⁵,Huang Xiaoling¹²³⁴⁵,Fang Mingzhi¹²³⁴⁵,Zhao Weiguo¹²³⁴⁵,Xu Shijie⁶⁷⁸^ORCID,Zhu Deliang¹²³⁴⁵^ORCID,Xu Wangying¹²³⁴⁵,Fang Ming¹²³⁴⁵,Liu Wenjun¹²³⁴⁵,Cao Peijiang¹²³⁴⁵,Lu Youming¹²³⁴⁵

Affiliation:

1. Shenzhen Key Laboratory of Special Functional Materials

2. Shenzhen Engineering Laboratory for Advanced Technology of Ceramics

3. Guangdong Research Center for Interfacial Engineering of Functional Materials

4. College of Materials Science and Engineering, Shenzhen University

5. Shenzhen 518060

6. Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI)

7. The University of Hong Kong

8. China

Abstract

Room-temperature-fabricated amorphous Ga₂O₃ is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC03613J

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2. Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection

3. High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (2¯01) orientation β-Ga2O3 deposited by the PLD method