All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure-Reference-Cited by-同舟云学术

All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure

Published:2014 Issue:15 Volume:6 Page:8551-8555
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sanchez Rafael S.¹²³⁴,Binetti Enrico⁵⁶⁷,Torre Jose A.¹²³⁴,Garcia-Belmonte G.¹²³⁴,Striccoli Marinella⁵⁶⁷,Mora-Sero Ivan¹²³⁴

Affiliation:

1. Photovoltaic and Optoelectronic Devices Group

2. Departament de Física

3. Universitat Jaume I

4. , Spain

5. CNR-IPCF Division of Bari

6. c/o Department of Chemistry, University of Bari

7. 70126 Bari, Italy

Abstract

Highly luminescent PbS-CdS quantum dots are used for the fabrication of all-solution processed NIR-Light Emitting Devices (LEDs) with inverse configuration on large area.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR01975J

Reference33 articles.

1. High-performance crosslinked colloidal quantum-dot light-emitting diodes

2. Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure

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4. A Versatile Strategy for Quantum Dot Ligand Exchange

5. Simultaneous photoluminescence import and mechanical enhancement of polymer films using silica-hybridized quantum dots

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