Heteroatomic stitching of broken WS2 monolayer with enhanced surface potential
Author:
Affiliation:
1. School of Mechanical and Materials Engineering, Indian Institute of Technology Mandi, Kamand, Himachal Pradesh, India-175075
2. Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395 Japan
Abstract
Funder
Department of Science and Technology, Ministry of Science and Technology, India
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06288G
Reference49 articles.
1. Giant photoresponsivity of transfer free grown fluorographene – MoS2 heterostructured ultra-stable transistors
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3. Wafer-Scale Uniform Synthesis of 2D Transition Metal Dichalcogenides Single Crystals via Chemical Vapor Deposition
4. A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications
5. Stretching and Breaking of Ultrathin MoS2
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