Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes-Reference-Cited by-同舟云学术

Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes

Published:2018 Issue:34 Volume:10 Page:16069-16078
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Ick-Joon¹²³⁴⁵,Kim Tae In¹²³⁴⁵,Kang Sumin⁶²³⁴⁵,Shim Gi Woong¹²³⁴⁵^ORCID,Woo Youngjun¹²³⁴⁵,Kim Taek-Soo⁶²³⁴⁵^ORCID,Choi Sung-Yool¹²³⁴⁵^ORCID

Affiliation:

1. School of Electrical Engineering

2. Korea Advanced Institute of Science and Technology (KAIST)

3. Daejeon 34141

4. Korea

5. Graphene/2D Materials Research Center

6. Department of Mechanical Engineering

Abstract

Stretchable MoS₂ transistors with graphene electrodes are proposed for basic building blocks enabling the creation of 2D materials-based stretchable displays.

Funder

National Research Foundation of Korea

LG Display

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR03173H

Reference59 articles.

1. Soft Microfluidic Assemblies of Sensors, Circuits, and Radios for the Skin

2. Ultrathin, highly flexible and stretchable PLEDs

3. Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors

4. Stretchable, Transparent Zinc Oxide Thin Film Transistors

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