Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys
Author:
Affiliation:
1. CEMES-CNRS
2. 31055 Toulouse
3. France
4. STMicroelectronics
5. 38920 Crolles
Abstract
Crystallization of Ge-rich GST leads to phase separation, a characteristic which explains their superior properties for electronic memory devices
Funder
Agence Nationale de la Recherche
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02302J
Reference31 articles.
1. Phase change memory technology
2. Phase-change materials for rewriteable data storage
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4. Recent Progress in Phase-Change_newline Memory Technology
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