300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates-Reference-Cited by-同舟云学术

300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates

Published:2014 Issue:21 Volume:6 Page:12391-12396
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Jiaqi¹²³²,Chen Chang¹²³²,Jans Hilde¹²,Xu Xiumei¹²,Verellen Niels¹²³²,Vos Ingrid¹²,Okumura Yasuaki¹²⁴⁵,Moshchalkov Victor V.³²,Lagae Liesbet¹²³²,Van Dorpe Pol¹²³²

Affiliation:

1. IMEC

2. B-3001 Leuven, Belgium

3. INPAC and Department of Physics and Astronomy

4. Panasonic Corporation

5. Kyoto 619-0237, Japan

Abstract

The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level for reliable surface enhanced Raman spectroscopy applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04315D

Reference35 articles.

1. Dispersion Characteristics in Disk-on-Pillar Array Nanostructures for Surface-Enhanced Raman Spectroscopy

2. Optimum Length of Silver Nanorods for Fabrication of Hot Spots

3. Focusing Plasmons in Nanoslits for Surface-Enhanced Raman Scattering

4. Improved SERS Performance from Au Nanopillar Arrays by Abridging the Pillar Tip Spacing by Ag Sputtering

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