Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices
2. South China University of Technology
3. Guangzhou 510640, China
4. Department of Electronic Materials
5. School of Materials Science and Engineering
Abstract
2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01076K
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