High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression-Reference-Cited by-同舟云学术

High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

Author:

Huo Nengjie¹²³⁴^ORCID,Yang Yujue¹²³⁴⁵,Wu Yu-Ning⁶⁷⁸⁹¹⁰,Zhang Xiao-Guang¹⁰¹¹¹²⁹,Pantelides Sokrates T.¹³¹⁴¹⁵⁹,Konstantatos Gerasimos¹²³⁴¹⁶

Affiliation:

1. ICFO – Institut de Ciencies Fotoniques

2. The Barcelona Institute of Science and Technology

3. Barcelona

4. Spain

5. School of Materials and Energy

6. National Energy Technology Laboratory

7. United States Department of Energy

8. Pittsburgh

9. USA

10. Department of Physics and the Quantum Theory Project

11. University of Florida

12. Gainesville

13. Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science

14. Vanderbilt University

15. Nashville

16. ICREA – Institució Catalana de Recerca i Estudis Avançats

Abstract

The electron–phonon scattering has been much suppressed in CVD MoS₂, leading to high carrier mobility improvement up to 60 cm² V⁻¹ s⁻¹.

Funder

Ministerio de Economía y Competitividad

Generalitat de Catalunya

Horizon 2020 Framework Programme

National Science Foundation

Guangdong University of Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference49 articles.

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