Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications-Reference-Cited by-同舟云学术

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

Published:2014 Issue:97 Volume:4 Page:54388-54397
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Tripathi R. K.¹²³⁴,Panwar O. S.¹²³⁴,Kesarwani A. K.¹²³⁴,Rawal Ishpal¹²³⁴,Singh B. P.⁵⁶³⁴,Dalai M. K.⁷⁸³⁴,Chockalingam S.¹²³⁴

Affiliation:

1. Polymorphic Carbon Thin Films Group

2. Physics of Energy Harvesting Division

3. CSIR-National Physical Laboratory

4. New Delhi-110012, India

5. Physics and Engineering of Carbon Materials

6. Division of Material Physics and Engineering

7. Electron and Ion Microscopy

8. Sophisticated and Analytical Instruments

Abstract

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA08343A

Reference54 articles.

1. Playing with carbon and silicon at the nanoscale

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4. Development of high efficiency p–i–n amorphous silicon solar cells with the p-μc-Si:H/p-a-SiC:H double window layer

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