Effect of Si, Be, Al, N and S dual doping on arsenene: first-principles insights-Reference-Cited by-同舟云学术

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Effect of Si, Be, Al, N and S dual doping on arsenene: first-principles insights

Published:2021 Issue:41 Volume:11 Page:25217-25227
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Mushtaq Muhammad¹²³⁴^ORCID,Godara Sumegha⁵⁶,Khenata Rabah⁷⁸⁹¹⁰,Usman Hameed Muhammad¹¹²³⁴

Affiliation:

1. Department of Physics

2. Women University of AJK

3. Bagh

4. Pakistan

5. Louisiana Tech University

6. USA

7. Laboratoire de Physique Quantique de la Matière et de Modélisation Mathématique (LPQ3M)

8. Université de Mascara

9. 29000 Mascara

10. Algeria

11. Department of Chemistry

Abstract

Spin density plots for SiAl–As and SiN–As systems.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA03394H

Reference34 articles.

1. Performance of arsenene and antimonene double-gate MOSFETs from first principles

2. Sub-5 nm Monolayer Arsenene and Antimonene Transistors

3. Tunable quantum spin Hall effect via strain in two-dimensional arsenene monolayer

4. Direct Synthesis and Practical Bandgap Estimation of Multilayer Arsenene Nanoribbons

5. Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material

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