Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures-Reference-Cited by-同舟云学术

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Published:2023 Issue:44 Volume:25 Page:30361-30372
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Kong Delin¹,Tian Feng¹,Xu Yingying¹^ORCID,Zhu Shaoqun¹,Yu Zetong¹,Xiong Lefeng¹,Li Peipei¹,Wei Huiyun¹^ORCID,Zheng Xinhe¹,Peng Mingzeng¹^ORCID

Affiliation:

1. Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083, China

Abstract

2D/3D Janus TMDs/III-nitrides polar heterointerfaces enable polarity manipulation to modulate their structural stability, electrostatic potential, charge transfer, and electronic band-structures for developing novel multifunctional applications.

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Youth Innovation Promotion Association

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02137H

Reference49 articles.

1. Polar Heterostructure for Multifunction Devices: Theoretical Studies