The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition-Reference-Cited by-同舟云学术

The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition

Published:2015 Issue:17 Volume:5 Page:12530-12535
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Zilan¹²³⁴,Su S. C.¹²³⁴,Younas M.¹²³⁴,Ling F. C. C.¹²³⁴,Anwand W.⁵⁶⁷⁸,Wagner A.⁵⁶⁷⁸

Affiliation:

1. Department of Physics

2. The University of Hong Kong

3. Hong Kong

4. P. R. China

5. Institute of Radiation Physics

6. Helmholtz-Zentrum Dresden-Rossendorf

7. 01328 Dresden

8. Germany

Abstract

A low temperature (10 K) photoluminescence study shows that green luminescence peaking at 2.47 eV and near band edge emission at 3.23 eV from the Zn-vacancy related defect are introduced in undoped ZnO grown by pulsed laser deposition after annealing at 900 °C.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA13084G

Reference31 articles.

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